(iiili ^zmi-l-onailctoi ij-^io ducts., one. lx t/ 20 stern ave. springfield, new jersey 07081 u.s.a. 1 n channel 1 enhancement mode avalanche-rated telephone: (973) 376-2922 buz 41 a pin1 pin 2 d pin 3 type buz 41 a vds 500v id 4.5 a ffds(on) 1.5q package to-220 ab maximum ratings parameter continuous drain current tc = 36 c pulsed drain current tc = 25 c avalanche current, limited by 7jmax avalanche energy, periodic limited by 7jmax avalanche energy, single pulse id = 4.5 a, vdd = 50 v, rgs = 25 a l = 28.4 mh, 7] = 25 c gate source voltage power dissipation tc = 25 c operating temperature storage temperature thermal resistance, chip case thermal resistance, chip to ambient din humidity category, din 40 040 iec climatic category, din iec 68-1 symbol id fopuls /ar ear as vgs plot t\sig ^thjc ^thja values 4.5 18 4.5 8 320 20 75 -55... + 150 -55... + 150 <1.67 75 e 55/150/56 unit a mj v w c k/w nj semi-conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. information furnished by nj semi-conductors is believed to be both accurate and reliable at the time of going to press. however, nj semi-conductors assumes no responsibility for any errors or omissions discovered in its use. nj semi-conductors encourages customers to verify that datasheets are current before placing orders. quality semi-conductors
electrical characteristics, at 7] = 25c, unless otherwise specified buz 41 a parameter symbol values min. typ. max. unit static characteristics drain- source breakdown voltage vgs = 0 v, /d = 0.25 ma, 7] = 25 c gate threshold voltage ^gs^^ds, b = 1 ma zero gate voltage drain current l/ds = 500 v, vgs = 0 v, 7] = 25 c l/bs = 500 v, vgs = 0 v, 7j = 125 c gate-source leakage current vgs = 20 v, vds = 0 v drain-source on-resistance vgs = 10v, /d = 3a ^(br)dss ^gs(th) /dss /gss ^ds(on) 500 2.1 - - - - - 3 0.1 10 10 1.3 - 4 1 100 100 1.5 v ua na q
buz 41 a electrical characteristics, at 71 = 25c, unless otherwise specified parameter symbol values min. typ. max. unit dynamic characteristics transconductance vds> 2 * /d * ^?ds(on)max, /d = 3 a input capacitance i/gs = 0 v, vds = 25 v, f= 1 mhz output capacitance vqs = 0 v, vds = 25 v, f= 1 mhz reverse transfer capacitance vgs = 0 v- vds = 25 v, f= 1 mhz turn-on delay time \/dd = 30v, vgs = 10v, /d = 2.6a rgs = 50 q rise time vdd = 30v,vgs=10v, /d = 2.6a rgs = 50 n turn-off delay time \/dd = 30v, vgs = 10v, /d = 2.6a rgs = 50 q fall time vdd = 30v, vgs = 10v, /d = 2-6a rgs = so q ffls mss q>ss qss 'd(on) tr *d(off) ft 2.5 - - - - - - - 4.3 850 100 40 15 50 140 50 - 1300 150 60 20 70 190 70 s pf ns
buz 41 a electrical characteristics, at 7] = 25c, unless otherwise specified parameter symbol values min. typ. max. unit reverse diode inverse diode continuous forward current tc = 25 c inverse diode direct current, pulsed 7c = 25 c inverse diode forward voltage vgs = 0 v, ip = 9 a reverse recovery time vr - 100 v, /f=/si d/f/df = 100 a/ms reverse recovery charge vr = 100 v, /f=/s, d/ji/df = 100 a/us is ism vsd trr qrr - - - - - - - 1 350 3 4.5 18 1.2 - - a v ns uc
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